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nurafarinide Headquarters
Company Information
We are nurafarinide based in , Iran. We are member of TradeKey.com since August, 2016. Our business is related to Electrical & Electronics Supplies industry and we specifically deal in x band transistors. Please find our product details below:
x-band transistor
Cree’s CGHV96050F2 is a gallium nitride (GaN) High Electron Mobility Transistor
(HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET
offers excellent power added efficiency in comparison to other technologies. GaN
has superior properties compared to silicon or gallium arsenide, including higher
breakdown voltage, higher saturated electron drift velocity and higher thermal
conductivity. GaN HEMTs also offer greater power density and wider bandwidths
compared to GaAs transistors. This IM FET is available in a metal/ceramic
flanged package for optimal electrical and thermal performance.
Thank you for taking time to go through our business profile. If there are any questions, inquiries or comments, please feel free to contact us.