Company Information
We are GSME INTERNATIONAL LIMITED based in HongKong , China. We are member of Tradekey.com since February, 2011. Our business is related to Electrical & Electronics Supplies industry and we specifically deal in transistor,diodes. Please find our product details below:
MMBTA94 High Voltage Transistor
MMBTA94 Epitaxial Planar Die Construction
Complementary NPN Type Available
Ideal for Medium Power Amplification and Switching
MAXIMUM RATINGS
Characteristic
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
-400
V
Collector-Base Voltage
VCBO
-400
V
Emitter-Base Voltage
VEBO
-7
V
Collector Current
Ic
-200
mA
Device Dissipation
PD
225
mW
Junction and Storage Temperature
TJ, Tstg
-55to+125
Degree
ELECTRICAL CHARACTERISTICS
TA=25Degree unless otherwise noted
Characteristic
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
(IC=1mA, IB=0)
V(BR)CEO
-400
—
V
Collector-Base Breakdown Voltage
(IC=100µA, IE=0)
V(BR)CBO
-400
__
V
Emitter-Base Breakdown Voltage
(IE= 100µA , IC=0)
V(BR)EBO
-7
—
V
Collector Cutoff Current
(VCB=300VIE=0)
ICBO
__
-500
nA
DC Current Gain
(Ic=10mA, VCE=10.0V)
HFE
40
300
—
Collector-Emitter Saturation Voltage
(Ic=100mA, IB=10mA)
VCE(sat)
—
-0.6
V
Current-Gain-Bandwidth Product
(Ic=10mA, VCE=20V, f=30MHz)
fT
50
__
MHz
DEVICE MARKING
GMA44(MMBTA44)=4D
DIP Diodes
Guilin Strong Micro Electronics (GSME) Co., Ltd., has been specializing in producing and marketing semiconductors including small signal transistor, power transistors, schottky diodes, switching diodes and MOS FETS.
The company got the ISO9001:2000 quality system certificate, ISO14001 environment system certificate, IECQ HSPM QC080000 and RoHS certificate.
DIP Diodes have the following main parameters:
1A1-1A7 1N4001-1N4007 RL207
1N5391-1N5398 1N5399 RL201-RL206
1N5401-1N5407 1N5408 1F1-1F7
FR101-FR107 FR157 FR151-FR156
FR201-FR206 FR207 FR301-FR306
HER101-HER107 FR307 HER201-HER207
HER301-HER307 HER308 UF5401-UF5408
UF4001-UF4007 HER108 HER208
SF11-SF18 SF21-SF28 SF31-SF38
1N5817-1N5819 SR160 SR180-SR1A0
SR240-SR260 1N5822 SR280-SR2A0
SR360 SR3A0 SR540-SR560
SR5A0 M1-M7 S2A-S2M
RS1A-RS1M FR2A-FR2M US1A-US1M
UF2A-UF2M ES1A-ES1J ER2A-ER2J
SS12 SS14 SS16 SS110 SK24
If you want more information on the parameters of the product, please contact us. We welcome your contact.
1N4001 General Purpose Rectifier with DO-41 Package
Type Rectifier Diode
Package Type Surface Mount
Max. Forward Voltage 1.1
Max. Reverse Voltage 50
Max. Forward Current 30
Max. Reverse Current 5.0(T=25)
1N4001
Low cost construction,
Low forward voltage drop,
Low reverse leakage,
high temperature surge current capaility.
1N4001 General Purpose Rectifier DO-41
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1N4148 schottky diode DO-35
Model Number 1N4148
Type Switching Diode
Package Type Surface Mount
Max. Forward Voltage 715mV(IF= 1mAdc)
Max. Reverse Voltage 75V
Max. Forward Current 150A
1N4148 schottky diode DO-35
FEATURES
Characteristic
Symbol
Max
Unit
Power dissipation
PD(Ta=25)
400
mW
Forward Current
IF
150
mA
Reverse Voltage
VR
75
V
Junction and Storage Temperature
TJ, Tstg
125, -65to 150
ELECTRICAL CHARACTERISTICS
(TA=25 unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Reverse Breakdown Voltage
(IR=1mA)
V(BR)
75
—
V
Reverse Leakage Current
(VR=75V)
IR
—
1
uA
Forward Voltage(Test Condition)
IF= 1mAdc
IF= 10mAdc
IF= 50mAdc
IF= 150mAdc
VF
—
715
855
1000
1250
mV
Diode Capacitance
(VR=10V, f=1MHz)
CD
—
2
pF
Thank you for taking the time to go through our business profile. If there are any question, inquiry or comments, please feel free to contact us.